isc Silicon NPN Power Transistor
MJ16002
DESCRIPTION ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% ...
isc Silicon NPN Power Transistor
MJ16002
DESCRIPTION ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base
Voltage
850
V
VCEO(SUS) Collector-Emitter
Voltage
450
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.4
UNIT ℃/W
isc website：www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining
Voltage IC=100mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 1.5A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.4A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 3A; IB= 0.4A
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0kHz
*:Pulse test:Pul...
