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MJ15026 Datasheet

Part Number MJ15026
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet MJ15026 DatasheetMJ15026 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Complement to the PNP MJ15027 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltag.

  MJ15026   MJ15026






Part Number MJ15027
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet MJ15026 DatasheetMJ15027 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·High current capability ·High power dissipation ·Complement to the NPN MJ15026 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier ·DC to DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Contin.

  MJ15026   MJ15026







Part Number MJ15027
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet MJ15026 DatasheetMJ15027 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ15027 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type MJ15026 ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC .

  MJ15026   MJ15026







Part Number MJ15025
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet MJ15026 DatasheetMJ15025 Datasheet (PDF)

isc Silicon PNP Power Transistors DESCRIPTION ·Complement to Type NPN MJ15024 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15025 APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5.

  MJ15026   MJ15026







Part Number MJ15025
Manufacturers Savantic
Logo Savantic
Description (MJ15023 / MJ15025) Silicon PNP Power Transistors
Datasheet MJ15026 DatasheetMJ15025 Datasheet (PDF)

www.DataSheet4U.com SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ15022; MJ15024 ·Excellent safe operating area ·High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector MJ15023 MJ15025 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25.

  MJ15026   MJ15026







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Complement to the PNP MJ15027 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 200 V VCBO Collector-Base Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 32 A IB Base Current-Continuous 7 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W MJ15026 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJ15026 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff Current VCE= 120V; IB= 0 ICBO Collector Cutoff Current VCB= 200V;IE=0 IEBO Emitte.


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