(IPD)
MIP2E3DMY
MOS
I
2.8±0.2 1.5±0.2
Unit : mm
10.5±0.5 9.5±0.2 8.0±0.2
6.7±0.3
4.5±0.2 1.4±0.1
I
15.4±0.3
φ 3.7±0.2
I
Ta = 25°C ± 3°C
13.5±0.5 4.2±0.3 Solder Dip
1.4±0.1
(9.3)
2.5±0.2 0.6 +0.1 –0.2
0.8±0.1
VD VC ID IDP IC Tch Tstg
700 10 1.15 1.60 0.1 150 −55 ∼ +150
V V A A A °C °C
2.54±0.3 5.08±0.5
1 2 3
1 : Control 2 : Source 3 : Dra...