ion–implanted, arsenic emitter transistors and an all gold metallization system. • Specified for 110/128/152–Channel Performance • Broadband Power Gain — @ f = 40 –1000 MHz Gp = 18.2 dB Min @ 750, 860 & 1000 MHz • Broadband Noise Figure NF = 5.5 dB T...
MHW8182 PDF File
