MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW7185CR/D
High Output Mirror Power Doubler...
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW7185CR/D
High Output Mirror Power Doubler 750 MHz CATV Amplifier
Specified for 77 and 110–Channel Performance Broadband Power Gain @ f = 750 MHz Gp = 19.4 dB (Typ) Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz Pin Configuration Mirrors that of MHW7185C Typical CTB @ 750 MHz under 110–Channel FLAT Loading = – 64 dBc
MHW7185CR
19.4 dB GAIN 750 MHz 110–CHANNEL CATV AMPLIFIER
MAXIMUM RATINGS
Rating RF
Voltage Input (Single Tone) DC Supply
Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +70 +28 –20 to +100 –40 to +100 Unit dBmV Vdc °C °C CASE 714Y–03, STYLE 2
ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope 50 MHz 750 MHz 40 – 750 MHz Symbol BW Gp S — IRL/ORL 19 — CSO110 CSO77 XMD110 XMD77 CTB110 CTB77 NF — — — — — — — — — 365 — — –72 – 80 – 66 –70 – 64 –71 5.0 5.3 6.2 400 — 0.006 – 64 –68 dBc 110–Channel FLAT 77–Channel FLAT 110–Channel FLAT 77–Channel FLAT 50 MHz 550 MHz 750 MHz – 63 – 68 dBc – 62 – 69 6.0 — 7.5 435 dB dB dB/MHz dBc 110–Channel FLAT 77–Channel FLAT Min 40 18.3 19 0 — Typ — 18.8 19.4 .5 0.3 Max 750 19.3 20 1.0 0.6 Unit MHz dB dB dB
Gain Flatness (40 – 750 MHz, Peak to Valley) Return Loss — Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortio...