ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 77–Channel Performance • Broadband Power Gain @ f = 40 – 550 MHz Gp = 34.5 dB (Typ) @ 50 MHz Gp = 35 dB (Min) @ 550 MHz • Broadband Noise ...
MHW6342 PDF File
