MHW5182A

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW5182A/D 450 MHz CATV Amplifier . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. Specified for 53– and 60–Channel Performance Broadband Power Gain  @ f = 40 – 450 MHz Gp = 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz Broadband Noise Figure NF = 6.5 dB (Max) Superior Gain, Return Loss and DC Current Stability with Temperature All Gold Metallization 7.0 GHz Ion–Implanted Transistors MHW5182A 18 dB GAIN 450 MHz 60–CHANNEL CATV INPUT/OUTPUT TRUNK AMPLIFIER CASE 714–06, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value + 70 + 28 – 20 to +100 – 40 to +100 Unit dBmV Vdc °C °C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain — 50 MHz Power Gain — 450 MHz Slope Gain Flatness (Peak To Valley) Return Loss — Input/Output (Zo = 75 Ohms) Second Order Intermodulation Distortion (Vout = + 46 dBmV per ch., Ch 2, M6, M15) (Vout = + 46 dBmV per ch., Ch 2, M13, M22) Cross Modulation Distortion (Vout = + 46 dBmV per ch.) Composite Triple Beat (Vout = + 46 dBmV per ch.) DIN (European Applications Only)* 300 MHz — (CH V + Q – P @ W) 400 MHz— (CH M8 + M15 – M9 @ M14) 450 MHz — (CH M20 ...