MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B5A120D/D
Preliminary Data Sheet
Integrated Power S...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B5A120D/D
Preliminary Data Sheet
Integrated Power Stage for 460 VAC Motor Drives
Hybrid Power Module
These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. Short Circuit Rated 10 µs @ 125°C Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) Compact Package Outline Access to Positive and Negative DC Bus UL Recognized
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
Motorola Preferred Devices
5.0, 10, 15 AMP, 1200 V HYBRID POWER MODULES
PRELIMINARY
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating IGBT Reverse
Voltage Gate-Emitter
Voltage Continuous IGBT Collector Current 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 Symbol VCES VGES ICmax Value 1200 ± 20 5.0 10 15 10 20 30 5.0 10 15 10 20 30 43 65 82 19 38 38 19 29 36 8.3 17 17 – 40 to +150 10 Unit V V A
Peak Repetitive IGBT Collector Current (1)
IC(pk)
A
Continuous Diode Current
IFmax
A
Peak Repetitive Diode Current (1)
IF(pk)
A
IGBT Power Dissipation per die (TC = 25°C)
PD
W
Diode Power Dissipation per d...