MHL9318

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL9318/D The RF Line Cellular Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 49 dBm Typ Power Gain: 17.5 dB Typ (@ f = 880 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA and CDMA Multi–Carrier Applications MHL9318 3.0 W, 17.5 dB 860–900 MHz RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AS–01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +20 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Output VSWR (f = 880 MHz) (f = 860–900 MHz) (f = 880 MHz) (f = 860–900 MHz) (f = 860–900 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin VSWRout ITO NF Min — 17 — — — — 47 — Typ 500 17.5 0.1 35.5 1.2:1 1.2:1 49 3 Max 560 18.5 0.2 — 1.5:1 1.5:1 ...