MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHL19926/D
The RF Line
PCS Band RF Linear LDMOS Amplifier
Designed for ultra--linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA, EDGE and CDMA. • Third Order Intercept P.
PCS Band RF Linear LDMOS Amplifier
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHL19926/D
The RF Line
PCS Band RF Linear LDMOS Amplifier
Designed for ultra--linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA, EDGE and CDMA. • Third Order Intercept Point: 50 dBm Typ • Power Gain: 29.4 dB Typ (@ f = 1960 MHz) • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Application
MHL19926
1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER
Freescale Semiconductor, Inc...
CASE 301AY-01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +17 --40 to +100 --20 to +100 Unit Vdc dBm °C °C
ELECTRICAL CHARACTERISTICS (TC = +25°C; VDD = 26 Vdc; 50 Ω System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression Input VSWR Third Order Intercept Noise Figure (f = 1960 MHz) (f = 1930--1990 MHz) (f = 1960 MHz) (f = 1930--1990 MHz) (f1 =1957 MHz, f2=1962 MHz) (f = 1990 MHz) Symbol IDD Gp GF P1 dB VSWRin ITO NF Min — 28.4 — 39 — 49.5 — Typ 1 29.4 0.3 40 1.2:1 50 4.2 Max 1.05 30.4 0.5 — 1.5:1 — 5 dBm dB Unit A dB dB dBm
NOT.