MHL19338

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHL19338/D The RF Line PCS Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 46 dBm Typ Power Gain: 30 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications MHL19338 1900–2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP–02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR (f = 1960 MHz) (f = 1900–2000 MHz) (f = 1950 MHz) (f = 1900–2000 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin ITO NF Min — 29 — 35 — 45 — Typ 500 30 0.1 36 1.2:1 46 4.2 Max 525 31 0.4 — 1.5:1 — 4.5 dBm dB Unit mA dB dB dBm Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) Noise Figure (f = 2000 MHz) REV 2 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 MHL19338 1 PACKAGE DIMENSIONS A G ...