■ General Description
MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
■ Features
• Fast Switching • Low ON Resistance(Rdson≤0.7Ω) • Low Gate Charge (Typical Data: 44nC.
Silicon N-Channel Power MOSFET
■ General Description
MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
■ Features
• Fast Switching • Low ON Resistance(Rdson≤0.7Ω) • Low Gate Charge (Typical Data: 44nC) • Low Reverse transfer capacitances(Typical:16pF) • 100% Single Pulse avalanche energy Test
■ Applications
• Power switch circuit of adaptor and charger.
MHF12N65CT
Silicon N-Channel Power MOSFET
■ Absolute (Tc= 25℃ unless otherwise specified):
Document ID : DS-21M64
1 Revised Date : 2015/09/16
Revision : C1
■ Electrical Characteristics (Tc= 25℃ unless otherwise specified):
MHF12N65CT
Silicon N-Channel Power MOSFET
Document ID : DS-21M64
2 Revised Date : 2015.