Chip Integration Technology Corporation
MHF04N60CT
Silicon N-Channel Power MOSFET
Main Product Characteristics
ID VDS...
Chip Integration Technology Corporation
MHF04N60CT
Silicon N-Channel Power
MOSFET
Main Product Characteristics
ID VDSS PD(TC=25oC) RDS(ON)Typ
4A 600V 30W 1.8Ω
■ Features
Fast switching. ESD improved capability. Low gate charge. (Typical Data:14.5nC) Low reverse transfer capacitances.(Typical:8.5pF) 100% single pulse avalanche energy test.
■ Application
Power switch circuit of adaptor and charger.
■ Outline
TO-220F
123
1.Gate 2.Drain 3.Source
Drain
■ Mechanical data
Epoxy:UL94-V0 rated flame retardant Case : JEDEC TO-220F molded plastic body over
passivated chip Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Gate
Source Inner Equivalent principium Chart
■ Absolute(TC = 25OC unless otherwise specified)
PARAMETER Drain to Source
Voltage
CONDITIONS
Continuous Drain Current Continuous Drain Current Pulsed Drain Current(Note:1) Gate to Source
Voltage Single Pulse Avalanche Energy(Note:2) Avalanche Current(Note...
