Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY40N60D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY40N60D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced...
