MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
™ Data Sheet Insulated Gate Bipolar Transis...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 160 mJ per Amp typical at 125°C High Short Circuit Capability – 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High
Voltage Termination Robust RBSOA
IGBT & DIODE IN TO–264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED
C G C E
G E CASE 340G–02 STYLE 5 TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector–Emitter
Voltage Collector–Gate
Voltage (RGE = 1.0 MΩ) Gate–Emitter
Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short ...