MGSF3454XT1

MGSF3454XT1 Product Preview Low RDS(on) Small-Signal MOSFETs Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS® process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP−6 Surface Mount Package Saves Board Space http://onsemi.com N−CHANNEL ENHANCEMENT−MODE MOSFET RDS(on) = 50 mW (TYP) DD S DDG CASE 318G−02, Style 1 TSOP 6 PLASTIC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Pulsed Drain Current (tp ≤ 10 ms) VDSS VGS ID IDM 30 ± 20 1.75 20 Vdc Vdc A Total Power Dissipation @ TA = 25°C PD 950 mW Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Thermal Resistance − Junction−to−Ambient RqJA 250 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommende...