MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection Low Threshold
Voltage to Interface Power Loads to Logic or
Microprocessor Devices Low Saturation
Voltage High Pulsed Current Capability
Order this document by MGP15N38CL/D
MGP15N38CL
15 AMPERES N–CHANNEL IGBT
VCE(on) = 1.8 V 380 VOLTS CLAMPED
C
G GC
E
CASE 221A–09 STYLE 9 TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Value
Collector–Emitter
Voltage Collector–Gate
Voltage Gate–Emitter
Voltage Collector Current — Continuous Total Power Dissipation
Derate above 25°C
VCES VCER VGE
IC PD
CLAMPED CLAMPED CLAMPED
15 136 0.9...