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MGP11N60E

Part Number	MGP11N60E
Manufacturer	Motorola
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Datasheet	MGP11N60E PDF File

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MOTOROLA
Designer's

SEMICONDUCTOR TECHNICAL DATA

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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to prov...

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