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MGFS36E2325

Mitsubishi Electric Semiconductor

2.3-2.5GHz HBT HYBRID IC


Description
MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change without notice. 2.3-2.5GHz HBT HYBRID IC Outline Drawing DESCRIPTION MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-...



Mitsubishi Electric Semiconductor

MGFS36E2325

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