PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICON...
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5212
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) .
BLOCK DIAGRAM
Vg1 Vg2
FEATURES
RF frequency : 24.5 to 26.5 GHz Linear gain : ≥ 13 dB P1dB : ≥ 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA
In
Out
Vd1
Vd2
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 120 240 16 -20 ~ +70 -65 ~ +175 +300 Units V V mA mA dBm ˚C ˚C ˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Limits Symbol Gain VSWR in VSWR out P1dB IM3 Gain Input VSWR Output VSWR Output power at 1 dB compression point Inter modulation level Parameter Conditions Min. Vd = 5 V Id1 = 90 mA Id2 = 180 mA (RF off) f = 24.5, 26.5 GHz Single tone f = 24.5, 26.5 GHz Tow tone(10MHz off) Pout = 20 dBm 13.0 2.2 2.2 23.0 (22.0) Typ. Max. dB dBm dBc Units
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5212
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1205 460
GND GND 950 RF in GND 550 Vd1 R(Vd1) R(Vd2) GND Vd2 V...
