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MGFC5110 Datasheet

Part Number MGFC5110
Manufacturers Mitsubishi
Logo Mitsubishi
Description Ka-Band 3-Stage Self Bias Low Noise Amplifier
Datasheet MGFC5110 DatasheetMGFC5110 Datasheet (PDF)

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . BLOCK DIAGRAM Vd1 Vd2 Vd3 FEATURES RF frequency : 37.0 to 40.0 GHz Super Low Noise NF=3.5dB (TYP.) In PHOTOGRAPH Out ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Vd Drain bias voltage .

  MGFC5110   MGFC5110






Ka-Band 3-Stage Self Bias Low Noise Amplifier

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . BLOCK DIAGRAM Vd1 Vd2 Vd3 FEATURES RF frequency : 37.0 to 40.0 GHz Super Low Noise NF=3.5dB (TYP.) In PHOTOGRAPH Out ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Vd Drain bias voltage Parameter Id Drain bias current Vg Gate bias voltage Pin Maximum peak input power overdrive (Duration < 1sec) Ta Operating temperature range TARGET SPECIFICATIONS (Ta=25˚C) Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Test conditions Operating frequency range Small signal gain Small signal gain flatness Noise figure On-wafer measurement Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias vo.


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