PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICON...
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band Low Noise Amplifier.(LNA) .
BLOCK DIAGRAM
FEATURES
RF frequency : 27.0 to 30.0 GHz Super Low Noise NF=2.5dB (TYP.)
In Vg1 Vg2 Vg3
Out
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Vd Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 3 30 Unit V mA V dBm ˚C
TBD TBD Limits
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Operating frequency range Small signal gain Small signal gain flatness Noise figure Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias voltage Drain bias current Gate bias voltage Freq=30GHz Vd=2.5V,Id=20mA On-wafer measurement 27.0 17.0 18.0 1.5 2.5 2.5:1 2.0:1 (5) TBD (17) TBD 2.5 30 No need dBm dBm V mA V as of July '98 30.0 Test conditions Min. Typ. Max. Unit GHz dB dB dB
MITSUBISHI ELECTRIC
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5109
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µm)
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