MGFC45V5053A Datasheet - 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET

MITSUBISHI SEMICONDUCTOR MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFC4...

MITSUBISHI SEMICONDUCTOR MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES (TARGET) Internally matched to 50 (Ω) system High output power P1dB=32W (TYP.) @f=5.05~5.25GHz High power gain GLP=10.0dB (TYP.) @f=5.05~5.25GHz High power added efficiency P.A.E.=33% (TYP.) @f=5.05~5.25GHz Low distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. APPLICATION 5.05~5.25GHz band amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=8A RG=25Ω Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25°C Rat...