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MGFC45V3642A Datasheet

Part Number MGFC45V3642A
Manufacturers Mitsubishi
Logo Mitsubishi
Description C band internally matched power GaAs FET
Datasheet MGFC45V3642A DatasheetMGFC45V3642A Datasheet (PDF)

< C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.) @f=3.6 – 4.2GHz  High power gain GLP=11.0dB (TYP.) @f=3.6 – 4.2GHz  High power added efficiency P..

  MGFC45V3642A   MGFC45V3642A






C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.) @f=3.6 – 4.2GHz  High power gain GLP=11.0dB (TYP.) @f=3.6 – 4.2GHz  High power added efficiency P.A.E.=36% (TYP.) @f=3.6 – 4.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 3.6 – 4.2 GHz band power amplifier  item 51 : 3.6 – 4.2 GHz band digital radio communication 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 QUALITY  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=8A  RG=25ohm Absolute m.


2005-04-29 : MC44251    MC44250    MST4110C    STR5412    SDA2008    SDA20000    LM121SS1T53    M383L2828ET1    M383L2920BTS-A2    M383L2920BTS-CAA   


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