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MGFC44V5964 Datasheet

Part Number MGFC44V5964
Manufacturers Mitsubishi
Logo Mitsubishi
Description C band internally matched power GaAs FET
Datasheet MGFC44V5964 DatasheetMGFC44V5964 Datasheet (PDF)

< C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=24W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.

  MGFC44V5964   MGFC44V5964






C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=24W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz  Low distortion [item -51] IM3=-42dBc (TYP.) @Po=33.5dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 QUALITY  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=6.4A  RG=25ohm Absolute ma.


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