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MGF4714CP

Part Number	MGF4714CP
Manufacturer	Mitsubishi
Description	PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
Published	Apr 29, 2005
Detailed Description	MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-...
Datasheet	MGF4714CP PDF File

Overview

MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
OUTLINE DRAWING (0.
6) 1 Unit:millimeters 2 FEATURES • Low noise figure NFmin.
=1.
00dB(MAX.
) • High associated gain Gs=11.
0dB(MIN.
) @f=12GHz @f=12GHz 2 (ø1.
2) 3 0.
5±0.
1 APPLICATION L to Ku band low noise amplifiers.
2.
2±0.
2 (8˚) (R0.
1) (R0.
1) QUALITY GRADE • GG 4.
0±0.
3 RECOMMENDED BIAS CONDITIONS • VDS=2V,ID=10mA • Refe...

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