MGF2407A

< High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES  High output power Po=24.5dBm(TYP.) @f=14.5GHz  High linear power gain GLP=8.0dB(TYP.) @f=14.5GHz  High power added efficiency P.A.E.=30%(TYP.) @f=14.5GHz,P1dB APPLICATION  S to Ku Band power amplifiers QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=75mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature *1:Tc=25C Ratings -15 -15 200 -0.6 2.5 1.5 175 -65 to +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making se...