MGF1951A Datasheet - Medium Power Microwave MESFET

MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET DESCRIPTION The MGF1951...

MITSUBISHI SEMICONDUTOR PRELIMINARY MGF1951 MGF1951A Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz Leadless Ceramic Package APPLICATION S- to Ku-Band Driver Amplifiers and Oscillators QUALITY General Grade ORDERING INFORMATION Part Number MGF1951A-01 Quantity 3.000 pcs/reel Supply Form Tape & Reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS (Ta=+25°C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to Drain Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Rating -8 -8 120 300 125 -65 to +125 Unit V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=+25°C) Symbol IDSS VGS(off) P1dB GLP Parameter Saturated Drain Current Gate to Source Cut-off Voltage Outpu...