DatasheetsPDF.com

MGF1801B

Mitsubishi
Part Number MGF1801B
Manufacturer Mitsubishi
Description MICROWAVE POWER GaAs FET
Published Apr 29, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET wi...
Datasheet PDF File MGF1801B PDF File

MGF1801B
MGF1801B

Overview
MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic for microstrip circuits.
package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.
1 Unit:millimeters 4MIN.
0.
5±0.
15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.
) • High linear power gain GLP=9dB(TYP.
) • High reliability and stability @f=8GHz 0.
5±0.
15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators.
2.
5±0.
2 QUALITY GRADE • IG RECOMMENDED BIAS...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)