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MGF1601 Datasheet

Part Number MGF1601
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description MICROWAVE POWER GaAs FET
Datasheet MGF1601 DatasheetMGF1601 Datasheet (PDF)

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  MGF1601   MGF1601






Part Number MGF1601B-01
Manufacturers Mitsubishi
Logo Mitsubishi
Description High-power GaAs FET
Datasheet MGF1601 DatasheetMGF1601B-01 Datasheet (PDF)

< High-power GaAs FET (small signal gain stage) > MGF1601B-01 S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION  S to X Band m.

  MGF1601   MGF1601







Part Number MGF1601B
Manufacturers Mitsubishi
Logo Mitsubishi
Description MICROWAVE POWER GaAs FET
Datasheet MGF1601 DatasheetMGF1601B Datasheet (PDF)

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) • High linear po.

  MGF1601   MGF1601







MICROWAVE POWER GaAs FET

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2008-01-25 : MGF1601    PIC17C7xx    PIC17C752    PIC17C756A    PIC17C762    PIC17C766    PIC17C75x    PIC17C752    D1795    PIC17C756   


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