Dec./2006
MITSUBISHI SEMICONDUTOR
MGF1451A
Low Noise MES FET
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
(Ta=25°C )
Symbol VGDO VGSO ID PT Tch Tstg
Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
Ratings -8 -8 120 300 175 -55 to +175
(Ta=25°C )
Unit V V mA mW °C °C
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) Glp P1dB Rt.
Parameter Gate to drain breakdown voltage Gate to source breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Linear Power Gain Output Power at 1dB gain Compression Thermal Resistance
Test...
