MGF0919A Datasheet - L & S BAND GaAs FET [ SMD non matched ]

MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET...

MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm Hermetic Package APPLICATION For UHF Band power amplifiers Fig.1 QUALITY GG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=300mA Rg=500Ω Delivery -01:Tape & Reel(1K), -03:Trai(50pcs) (Ta=25°C) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 800 -2.4 10 6 175 -65 to +175 (Ta=25°C) Unit V V mA mA mA W °C °C Electrical characteristics Symbol IDSS VGS(off) gm Po ηadd GLP NF Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=2.0mA VDS=3V,ID=300mA VDS=10V,ID=300mA,f=1.9GHz Pin=12dBm VDS=10V,ID=300mA,f=1.9GHz ∆Vf Method -1.0 28 17 - Limits Typ. 600 260 30 37 19 1.2 17 Max. 800 -5.0 25 Unit mA V mS dBm % dB dB °C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Elect...