Preliminary
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
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Preliminary
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band
amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0918A
L & S BAND GaAs FET [ SMD non – matched ]
FEATURES
· High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm · High power gain Gp=20dB(TYP.) @f=1.9GHz · High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm · Hermetic Package
APPLICATION
· For UHF Band power amplifiers
Fig.1
QUALITY
· GG
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=150mA · Rg=1kW
Delivery
Tape & Reel
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 400 -1.2 5.0 3 175 -65 to +175
Unit
V V mA mA mA W °C °C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=1.0mA VDS=3V,ID=150mA VDS=10V,ID=150mA,f=1.9GHz Pin=8dBm VDS=10V,ID=150mA,f=1.9GHz DVf Method -1.0 25 -
Limits
Typ. 300 130 27 45 20 1.0 35 Max. 400 -5.0 50
Unit
mA V mS dBm % dB dB °C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
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