MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-chann...
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band
amplifiers.
OUTLINE DRAWING
Unit:millimeters
FEATURES
High output power P1dB=38dBm(TYP.) High power gain GLP=11dB(TYP.) High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm
2
1
@f=2.3GHz
2
0.6±0.2 ø2.2
3
APPLICATION
For UHF Band power
amplifiers
5.0
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.3A Rg=100Ω Refer to Bias Procedure
9.0±0.2 14.0
1 GATE 2 SOURCE 3 DRAIN
GF-7
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol VGSO VGDO ID IGR IGF PT Tch Tstg
*1:TC=25˚C
Parameter Gate to source
voltage Gate to drain
voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature
Ratings -15 -15 5.0 15 31.5 27.3 175 -65 to +175
*1
Unit V V A mA mA W ˚C ˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol IDSS VGs(off) gm P1dB GLP ηadd Rth(ch-c) Parameter Saturated drain current Gate to source cut-off
voltage Transconductance Output power Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz ∆Vf method Test conditions Min – -2 – 37 10 – – Limits Typ – – 1.5 38 11 45 – Max 5 -5 – – – – 5.5 Unit A V S dBm dB % ˚C/W
*1:Channel to case *2:Pin=22dBm
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S B...