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MGF0904A

Part Number	MGF0904A
Manufacturer	Mitsubishi
Description	High-power GaAs FET
Published	Sep 7, 2017
Detailed Description	< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, Ga...
Datasheet	MGF0904A PDF File

Overview

< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.
6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES • High output power Po=28.
0dBm(TYP.
) @f=1.
65GHz,Pin=15dBm • High power gain Gp=13.
0dB(TYP.
) @f=1.
65GHz,Pin=15dBm • High power added efficiency P.
A.
E=40%(TYP.
) @f=1.
65GHz,Pin=15dBm APPLICATION • MMDS/UMTS/WiMAX QUALITY • GG Packaging • 4 inch Tray (25 pcs) RECOMMENDED BIAS CONDITIONS • Vds=8V • Ids=200mA • Rg=500Ω Absolute maximum ratings Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to Drain Voltage Gate to source voltage Drain current Reverse gate current Forward ...

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