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MG25Q6ES42

Part Number	MG25Q6ES42
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module
Published	Apr 29, 2005
Datasheet	MG25Q6ES42 PDF File

Features

• 6 IGBTs are built into 1 package

• High speed:

• Low saturation voltage: 
• Enhancement mode

tf = 0.5µs (Max.)
trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.)

• The electrodes are isolated from case

Maximum Ratings (Ta = 25°C)

CHARACTERISTICS

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