MG25J1BS11

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Rating 600 ±20 25 50 125 150 −40 to 125 2500 (AC 1 Minute) 2/3 Unit V V A W °C °C V N·m ― ― 2-33F2A 1 2003-04-11 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 25mA, VCE = 5V IC = 25A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz ― MG25J1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.3 2.7 V ― 1400 ― pF ― 0.3 0.6 ― 0.4 0.8 µs ― 0.6 1.0 ― 1.0 1.6 ― ― 1.00 °C / W 2 2003-04-11 MG25J1BS11 3 2003-04-11 MG25J1BS11 4 2003-04-11 MG25J1BS11 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless,...