MG200Q1JS40

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 MG200Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 1200 200 400 200 400 1300 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A A W °C °C V N·m ― ― 2-109C3A 1 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Reverse current Forward voltage Rise time Turn-on time Fall time Turn-off time Reverse recovery time Thermal resistance Transistor Diode Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff IR VF trr VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 VCE = 5V, IC = 200mA IC = 200A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz VR = 1200V IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Rth (j-c) MG2...