TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS40
MG150Q2YS40
High Power Switching applications Motor Control Appl...
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS40
MG150Q2YS40
High Power Switching applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.5µs (max)
trr = 0.5µs (max) l Low saturation
voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a complate half bridge in one package. l The electrodes are isolated from case.
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 430g (typ.)
― ― 2-109C1A
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter
voltage
Gate-emitter
voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation
voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg VIsol
―
Rating
1200 ±20 150 300 150 300 1100 150 −40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
A
A
W °C °C V
N·m
1 2001-08-16
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off
voltage
Collector-emitter saturation
voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Forward
voltage
Reverse recovery time
Thermal resistance
Symbol
IGES ICES VGE (off) VCE (sat) Cies
tr ton tf toff VF
trr
Rth (j-c)
Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 150mA , VCE = 5V IC = 150A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
IF = 150A, VGE = 0 IF = 150A, VGE = −10V di / dt = 200A / µs Transistor ...