MG150J7KS50

MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT : : : : Outline Weight: 520g Inverter stage VCE (sat) = 2.8V (max) (@IC = 150A) tf = 0.5µs (max) (@IC = 150A) trr = 0.3µs (max) (@IF = 150A) l l : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 150 300 150 300 320 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A Forward current A W °C °C V N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector-emitter cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Forward voltage Rise time Turn-on time Switching time Fall time Turn-off time Reverse recovery time Symbol IGES ICES VGE (off) VCE (sat) Cies VF tr ton tf toff trr Rth (j-c) Rth (c-f) Transistor stage Diode stage Case to fin (Note 2) Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 VCE = 5V, IC = 15mA, IC = 150A, VGE = 15V VCE = 10V, VGE = 0V, f = 1MHz IF = 150A Inductive ...