TOSHIBA GTR Module Silicon N Channel IGBT
MG150J2YS50
MG150J2YS50
High Power Switching Applications Motor Control Appl...
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J2YS50
MG150J2YS50
High Power Switching Applications Motor Control Applications
Unit: mm
l The electrodes are isolated from case
l High input impedance
l Includes a complete half bridge in one package
l Enhancement-mode
l High speed
: tf = 0.30µs (Max) (IC = 150A) trr = 0.15µs (Max) (IF = 150A)
l Low saturation
voltage : VCE (sat) = 2.70V (Max) (IC = 150A)
Equivalent Circuit
JEDEC EIAJ TOSHIBA
― ― 2-95A1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter
voltage
Gate-emitter
voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation
voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg
VIsol
―
Rating
600 ±20 150 300 150 300 780 150 −40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
A
A
W °C °C V N·m
000707EAA2
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