MFE140
High-reliability discrete products and engineering services since 1977
DUAL GATE MOSFET
FEATURES Available a...
MFE140
High-reliability discrete products and engineering services since 1977
DUAL GATE
MOSFET
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS. Rating
Drain-source
voltage Gate-source
voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Operating and storage temperature range
Symbol VDS VGS ID IG
PD
TJ, Tstg
Value 25 ±7.0 30 10
300
-65 to 175
Unit Vdc Vdc mAdc mAdc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain source breakdown
voltage (ID = 10µAdc, VS = 0, VG1 = -4.0Vdc, VG2 = 4.0Vdc)
V(BR)DSX
Gate 1-source breakdown
voltage (IG1 = ±10µAdc, VG2S = 0)
Gate 2-source breakdown
voltage (IG2 = ±10µAdc, VG2S = 0)
Gate 1 leakage current (VG1S = ±6.0Vdc, VG2S = 0, VDS =...
