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MF1011B900Y

Philipss

Microwave power transistor


Description
DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% Diffused emitter ballasting resistors im...



Philipss

MF1011B900Y

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