Advanced Technical Information
HiPerFREDTM Epitaxial Diode
dual diode, common cathode
MEK 600-04 DA
VRRM = 400 V IFAV...
Advanced Technical Information
HiPerFREDTM Epitaxial Diode
dual diode, common cathode
MEK 600-04 DA
VRRM = 400 V IFAVM = 880 A trr = 220 ns
VRSM V 400
VRRM V 400
Type
1
2
3 1
2
3
MEK 600-04DA
w w w . D a t a S h e e t 4 U . c o m
Symbol IFAVM IFAVM IFSM TVJ Tstg Ptot VISOL Md a
Conditions TC = 25°C; rectangular, d = 0.5 TC = 80°C; rectangular, d = 0.5 TVJ = 25°C; t = 10 ms (50 Hz), sine
Maximum Ratings 880 575 tbd -40...+150 -40...+125 A A A °C °C W V~ Nm/lb.in. Nm/lb.in. m/s2
Features HiPerFREDTM diode chips - fast reverse recovery - low operating forward
voltage - low leakage current - avalanche capability Industry Standard package - with isolated DCB ceramic base plate - UL registered E72873 Applications Topologies - dual diode with common cathode - high current single diode with pins 1 and 3 paralleled Circuits - free wheeling diode of choppers, H-bridges, phaselegs etc. - secondary rectifier for switched mode power supplies, welders etc. Dimensions in mm (1 mm = 0.0394")
TC = 25°C 50/60 Hz, RMS; IISOL ≤ 1 mA Mounting torque with screw M5 Terminal connection torque Allowable acceleration
1100 3600 2.25-2.75/20-25 4.5-5.5/40-48 50
Symbol IR VF trr IRM RthJS RthJC dS dA Weight
Conditions min. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 400 A; TVJ = 125°C TVJ = 25°C
Characteristic Values typ. max. 6 6 1.1 1.4 220 80 0.11 0.22 mA mA V V ns A K/W K/W mm mm 150 g
VR = 100 V; -diF/dt = 900 A/µs IF = 400 A; TVJ = 125°C
Creeping distance on surf...