P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME7835 P-Channel logic enhancement mode power field effect tra...
P-Channel Enhancement Mode
Mosfet
GENERAL DESCRIPTION
The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME7835/ME7835-G
FEATURES
● RDS(ON) ≦18mΩ@VGS=-10V ● RDS(ON) ≦36mΩ@VGS=-4.5V
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
PIN CONFIGURATION
(DFN 3.3x3.3) Top View
e Ordering Information: ME7835 (Pb-free)
ME7835-G (Green product-Halogen free)
Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Conti...