ME7809-G

P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter low side switching ● Load Switch * The Ordering Information: ME7809 (Pb-free) ME7809-G (Green product- Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Vol...