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ME7607 Datasheet

Part Number ME7607
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7607 DatasheetME7607 Datasheet (PDF)

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME7607 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switc.

  ME7607   ME7607






Part Number ME7609D-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7607 DatasheetME7609D-G Datasheet (PDF)

ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low.

  ME7607   ME7607







Part Number ME7609D
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7607 DatasheetME7609D Datasheet (PDF)

ME7609D/ME7609D-G P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL DESCRIPTION The ME7609D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low.

  ME7607   ME7607







Part Number ME7607-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7607 DatasheetME7607-G Datasheet (PDF)

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME7607 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switc.

  ME7607   ME7607







P-Channel MOSFET

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME7607 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View FEATURES ● RDS(ON)≦6mΩ@VGS=-10V ● RDS(ON)≦9mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering In.


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