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ME7423 Datasheet

Part Number ME7423
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7423 DatasheetME7423 Datasheet (PDF)

P-Channel Enhancement Mosfet GENERAL DESCRIPTION The ME7423 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in .

  ME7423   ME7423






Part Number ME7423S-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7423 DatasheetME7423S-G Datasheet (PDF)

P-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7423S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a .

  ME7423   ME7423







Part Number ME7423-G
Manufacturers Matsuki
Logo Matsuki
Description P-Channel MOSFET
Datasheet ME7423 DatasheetME7423-G Datasheet (PDF)

P-Channel Enhancement Mosfet GENERAL DESCRIPTION The ME7423 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in .

  ME7423   ME7423







P-Channel MOSFET

P-Channel Enhancement Mosfet GENERAL DESCRIPTION The ME7423 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME7423/ME7423-G FEATURES ● RDS(ON) ≦13mΩ@VGS=-10V ● RDS(ON) ≦17mΩ@ VGS=-4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (DFN 3.3x3.3) Top View e Ordering Information: ME7423 (Pb-free) ME7423-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuou.


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