ME7114AS-G

N-Channel 30V(D-S) MOSFET ME7114AS/ME7114AS-G GENERAL DESCRIPTION The ME7114AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View FEATURES ● RDS(ON)≦7mΩ@VGS=10V ● RDS(ON)≦10.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch Ordering Information: ME7114AS(Pb-free) ME7114AS-G (Green product-Halogen free) Absolute ...