N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7114-G is the N-Channel logic enhancement mode power fie...
N-Channel 30V(D-S) Enhancement
MOSFET
GENERAL DESCRIPTION
The ME7114-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3.3x3.3) Top View
ME7114-G
FEATURES
● RDS(ON)≦7mΩ@VGS=10V ● RDS(ON)≦10.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch
Bottom View e Ordering Information: ME7114-G (Green product-Halogen free)
Absolute Maximum R...
